Product Description
The Candela 8720 wafer inspection system employs proprietary optical technology to simultaneously measure scatter intensity at two angles of incidence. It captures topographic variations, surface reflectivity, phase shift and photoluminescence for automatic detection and classification of a broad range of defects of interest (DOI). Applications of advanced surface inspection include GaN inspection for radio frequency (RF), power and high brightness light emitting diode (HBLED), with capability to detect cracks, crystal dislocation defects, hillocks, micropits, sliplines, bumps and hex bumps, and epi defects. The 8720 inspection system is also used for defect inspection on other high-end compound semiconductor process materials such as Gallium Arsenide (GaAs) and Indium Phosphide (InP) for LED, VCSELs and photonics applications.
Features
- Advanced detection of crystal dislocation defects
- Detects defects on high-end compound semiconductor materials up to 200mm in diameter
- Supports a wide range of wafer thickness
- Suitable for macro and micro defects such as cracks, MQW disturbances, particle, scratch, pit, bump and stain defects
Use Cases
- Substrate quality control
- Substrate vendor comparison
- Incoming wafer quality control (IQC)
- Outgoing wafer quality control (IQC)
- CMP (chemical mechanical process) / polishing process control
- Wafer clean process control
- Epitaxy process control
- Substrate to epitaxy correlation
- Epitaxy reactor vendor comparison
- Process tool monitoring
Industries
- HBLED, MicroLED including AR|VR
- GaN RF and GaN power applications
- Communications (5G, LiDAR, Sensors)
- Other high-end compound semiconductor devices
Options
- SECS-GEM
- Light tower
- Diamond scribe
- Calibration standards
- Offline software
- Optical character recognition (OCR)
- Photoluminescence
